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	题名	作者	年代	出处	被引量
1	显示文摘	BowmanR M	1997	ApplPhys Lett1997，71，25：	1
2	Photolumineseent Properties of K2GeF6 : Mn4+ Red Phosphor Synthesized from Aqueous HF/KMnO4 Solution 显示文摘	Adaehi S Takahashi T	2009	J ApplPhys2009，106，01：	1
3	Enhancement of radiate recombination in Sibased quantum with neighboring confinement structure显示文摘	Usami N	1995	ApplPhys Lett1995，67，：	1
4	Laser-induced incandescence for soot-particle sizing at elevated pres- sure显示文摘	Hofmann M Kock B F Dreier T	2008	ApplPhys B2008，90，34：	1
5	A modelofthemagneticpropertiesofcoupledferromagnetic/antiferromagneticbilayers显示文摘	ChooD ChantrellR W LambertonR etal	2007	J ApplPhys2007，101，：	1
6	Shock-Induced Dynamic Yielding in Copper Single Crystals显示文摘	Jones O E Mote J D	1969	J ApplPhys1969，40，：	1
7	Ordered Semiconductor ZnoNanorod Arrays and Their Photoluminescence Properties显示文摘	Li Y Meng G Zhang L D	2000	ApplPhys Lett2000，，76：	1
8	Resistive switching of Au-impanted ZrO2 film for nonvolatile memory appli cation 显示文摘	Liu Q Guan W H Long S B	2008	J ApplPhys2008，104，11：	1
9	Fabrication of a graded-wavelength guided-mode resonance filter photonic crystal 显示文摘	D W Dobbs I Gershkovich B T Cunninghama	2006	ApplPhys Lett2006，89，12：	1
10	Correlation of Aluminum Content, Inclusion Structureand Core Loss of Nonoriented Electrical Steel 显示文摘	Boc I	1986	J ApplPhys1986，64，10：	1
11	In-vacuum cleaving and coating of semiconductor laser facets using silicon and dielectric 显示文摘	SCHUBERT L HONG M MEYER G	1996	J ApplPhys1996，80，6448：	1
12	显示文摘	ChoiW B Chung D S Kang J H etal	1999	ApplPhys Lett1999，76，：	1
13	Microfluidic methods for generating continuous droplet streams 显示文摘	Christopher GF Anna SL	2007	J Phys D: ApplPhys2007，40，19：	1
14	Balancedfull-color white organic light-emitting devices withsimple double-emissive-layer structure显示文摘	YU Junsheng WEN Wen WANG Jun	2009	Jpn J ApplPhys2009，484，04：	1
15	Broadband moth-eyeantireflection coatings fabricated by low-cost nanoimprinting 显示文摘	CHEN Q HUBBARD G SHIELDS P A	2009	ApplPhys Lett2009，94，26：	1
16	Wstructrued type-Ⅱ superlattice infrared infared detectors 显示文摘	AIFER E H TISCHLER J G WARNER J H	1987	J ApplPhys1987，62，：	1
17	Origin of the n-Type Conductivity of InN~ The Role of Positively Charged Dislocations 显示文摘	Piper L F Veal T D McConville C F	2006	ApplPhys Lett2006，88，25：	1
18	Efficient excimer ultraviolet sources from a dielectric barrier discharge in rare-gas/halogen mixtures 显示文摘	Zhang J Y Boyd I W	1996	J ApplPhys1996，80，2：	1
19	Epperlein Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes显示文摘	Hans Brugger Peter W	1990	Applphys Lett1990，56，11：	1
20	Plasma discharge efficiency increase by using a small handgap protective layer material-first- principles study forMg ,Zn,O显示文摘	Tu Y Tolner H	2011	J ApplPhys2011，109，09：	1

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