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412篇 您的检索式：期刊名="Electron Device Lett IEEE"

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	题名	作者	年代	出处	被引量
1	Performance limiting micropipe defects in silicon carbide wafers 显示文摘	NEUDECK P G POWELL J A	1994	IEEE Electron Device Lett1994，15，：	2
2	40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology显示文摘	Zhang Y Whelan C S Leoni R	2003	IEEE Electron Device Lett2003，24，9：	1
3	AIInN/ AIN/GaN HEMT technology on SiC with 10 W/mm and 50% PAE at 10 GHz显示文摘	Sarazin N Morvan E Poisson M A F	2010	IEEE Electron Device Lett2010，31，1：	1
4	'AIGaN/ AIN/ GaN high power microwave HEMT'显示文摘	Shen L	2001	IEEE Electron Device Lett2001，22，10：	1
5	Monolithic integration of resonant tunneling diodes and FET's for monostable-bistable transition logic elements(MOBILE's)显示文摘	Chen K J Akeyoshi T Maezawa K	1995	IEEE Electron Device Lett1995，16，2：	1
6	On the electrical conduction in the interpolysilicon dielectric layers显示文摘	COBIANU C POPA O DASCALU D	1993	IEEE Electron Device Lett1993，14，5：	1
7	Power stability of AlGaN/GaN HFETs at 20 W/mm in the pinched-off operation mode显示文摘	KOUDYMOV A WANG C X ADIVARAHAN V	2007	IEEE Electron Device Lett2007，28，1：	1
8	InAIN/ GaN MOSHEMT with self-aligned thermally generat- ed oxide recess显示文摘	Alomari M Medjdoub F Carlin J F	2009	IEEE Electron Device Lett2009，30，11：	1
9	Effective passivation of A1GaN/GaN HEMTs by ALD-grown A1N thin film 显示文摘	HUANG S JIANG Q M YANG S	2012	IEEE Electron Device Lett2012，33，4：	1
10	Submicron Gate Si3N4/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors显示文摘	Gaevski M Sun W H	2003	IEEE Electron Device Lett2003，24，9：	1
11	Unipolar resis- tive switching properties of diamondlike carbon-based RRAM devices显示文摘	Fu Di Xie Dan Feng Tingting	2011	IEEE Electron Device Lett2011，32，6：	1
12	Through-silicon vias filled with densified and transferred carbon nanotube forests 显示文摘	WANG T CHEN S JIANG D	2012	IEEE Electron Device Lett2012，33，3：	1
13	The effect of fixed charge in tunnel-barrier contacts for fermi-level depinning in germanium显示文摘	ROY A M LIN J SARASWAT K C	2012	Electron Device Lett IEEE2012，33，6：	1
14	Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation显示文摘	KIM H THOMPSON R M TILAK V	2003	IEEE Electron Device Lett2003，24，7：	1
15	Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs显示文摘	Guerra D Akis R Marino F A	2010	IEEE Electron Device Lett2010，31，11：	1
16	Grade-base Si/Si1-xGex/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics 显示文摘		1991	IEEE Electron Device Lett1991，12，6：	1
17	Sub-60-nm quasi-planar FinFETs fabricated using a simplified process显示文摘	CHANG L CHOI Y K	2001	IEEE Electron Device Lett2001，22，：	1
18	205 GHz (AI,In)N/ GaN HEMTs显示文摘	Sun H Alt A R Benedickter H	2010	IEEE Electron Device Lett2010，31，9：	1
19	Kink-free SOI analog circuit design with floating-body/NFD MOSFET's显示文摘	DUCKHYUN C JERRY G F SCOTT K R	1997	IEEE Electron Device Lett1997，18，12：	1
20	RTD/ HFET low stand by power SRAM gain cell显示文摘	WagtJPAV Seabaugh A C Beam E A	1998	IEEE Electron Device Lett1998，19，1：	1

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