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	题名	作者	年代	出处	被引量
1	Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1-xAs and InyGa1-yAs/GaAs multipla quantum wells显示文摘	B(u)rkner S Maler M Larkins E C	1995	J Electronic Materials1995，24，7：	2
2	Solution chemical constrains in the chemical-mechanical polishing of copper:Aqueous stability diagrams for the Cu-H2O and Cu-NH3-H2O systems显示文摘	OSSEO-ASARB K MISHRA K K	1996	J of Electronic Materials1996，25，10：	1
3	Design ofmonoblock dielectric filter using (PbCa) (FeNbSn)O3 ceramics 显示文摘	Kang Chongyun JI-Won Choi	1999	J Mater Sci: Materials in Electronics1999，10，：	1
4	MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays:a review of recent progress显示文摘	JENSEN J E GORWITZMD	1999	J Electronic Materials1999，28，9：	1
5	Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy显示文摘	EVERSON W J ARD C K SEPICH J L	1995	J Electronic Materials1995，24，5：	1
6	Fabrica-tion of high-performance large-format MWIR focal plane qrrays from MBE-growth of HgCdTe on 4'silicon substrates显示文摘	BoRNFREUND R E CHILDS A C	2001	J Electronic Materials2001，30，6：	1
7	Temperature Investiga- tion of the Gate- Drain Diode of Power GaAs MESFET With Low- Temperature Grown (Al)GaAs Passivation显示文摘	Nguyen N X Hwang Y	1993	J Electron Material1993，22，12：	1
8	Interfacial transfer between copper and polyurethane in chemical-mechanical polishing 显示文摘	LIANG C MOGNE T L	2002	J of Electronic Materials2002，31，8：	1
9	Characterization and optimization of copper chemical mechanical planarization 显示文摘	LAURSEN T GRIEF M	2002	J of Electronic Materials2002，31，10：	1
10	Properties of highreinforcement- content aluminum matrix composite for electronic packages 显示文摘	WU G H ZHANG Q CHEN G Q	2003	J of Materials Science-Materials in Electronics2003，，1：	1
11	The effect of small additions of copper on the aging kinetics of the intermetallic layer and intermetallic particles of eutectic tin-silver solder joints 显示文摘	SIGELKO J CHOI S SUBRANMANIAN K N LUCAS J P	2000	J Electronic Materials2000，29，：	1
12	Effect of cooling rate on microstructure and mechanical properties of eutectic Sn-Ag solder joints with and without intentionally incorporated Cu6Sn5 reinforcement 显示文摘	SIGELKO J CHOI S LUCAS J P SUBRANMANIAN K N BIELER T R	1999	J Electronic Materials1999，28，：	1
13	Etching of silicon carbide for device fabrication and through via-hole formation显示文摘	KHAN F A ROOF B ZHOU L	2001	J Electronic Materials2001，30，3：	1
14	Low temperature synthesis of sol-gel derived Al-doped ZnO thin films with rapid ther- mal annealing process显示文摘	Wang H Xu M H Xu J W	2009	J Mater Sci: Materials in Electronics2009，21，6：	1
15	Adhesion strength of leadframes /EMC interfaces 显示文摘	Lee H Y Yu J	1999	J Electronic Materials1999，28，12：	1
16	Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN显示文摘	SHUR M GELMONT B KHAN M A	1996	J of Electronic Materials1996，25，5：	1
17	Comparision of F2 plasma chemistries for deep etching of SiC显示文摘	LEERUNGNAwARAT P	2001	J Electronic Materials2001，30，1：	1
18	Reaction of aluminum on titanium bilayer with GaN: Influence of the Al: Ti atomic ratio 显示文摘	Gasser S M Kolawa E Nicolat M A	1999	J Electronic Materials1999，28，8：	1
19	HgCdTe focal plane arrays for dual color mid and long wavelength infrared detection 显示文摘	SIMTH P G PHAM L T VENZPR G M	2004	J Electron Materials2004，33，6：	1
20	显示文摘	Fergusun K J Telang A Lee J G	2003	J Mater Sci: Materials in Electronics2003，14，：	1

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