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		题名	作者	年代	出处	被引量
	1	Green Vertical‑Cavity Surface‑Emitting Lasers Based on InGaN Quantum Dots and Short Cavity显示文摘Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs.	Tao Yang Yan‑Hui Chen Ya‑Chao Wang Wei Ou Lei‑Ying Ying Yang Mei Ai‑Qin Tian Jian‑Ping Liu Hao‑Chung Guo Bao‑Ping Zhang	2023	Nano-Micro Letters2023，15，12：	0
	2	Correction to:Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short显示文摘Correction to:Nano-Micro Lett.(2023)15:223 http://gffzzd3cc09b8251d45dfskc0b655v9uxn6k9v.ffgz.tsg.suse.edu.cn/10.1007/s40820-023-01189-0 In this article the author’s name“Hao-Chung Kuo”was incorrectly written as“Hao-Chung Guo”.And in the last sentence of the first paragraph of Introduction,the text‘(20-20)’should have read‘(20-21)’.The original article has been corrected.	Tao Yang Yan‑Hui Chen Ya‑Chao Wang Wei Ou Lei‑Ying Ying Yang Mei Ai‑Qin Tian Jian‑Ping Liu Hao‑Chung Kuo Bao‑Ping Zhang	2024	Nano-Micro Letters2024，16，4：	0

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