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| 1 | 有机半导体薄膜空间电荷分布对晶体管性能影响的研究进展显示文摘有机场效应晶体管(OFETs)是下一代柔性电子产业的基础元件,具有可弯曲、透明、低成本、可溶液加工等优良特性,并逐渐开始应用于生物传感器、柔性显示等领域。然而,OFETs仍存在如工作电流小、跨导小、开关比低、空气稳定性差等问题,限制了其进一步的发展。OFETs器件的性能主要受到导电沟道中电荷和电流分布的影响,若能通过外加手段,调控沟道中的电荷和电流分布,可能获得具有更高性能或新机理的器件。本文结合课题组内的工作,对国内外该领域的最新进展进行综述和展望。 | 胡郁蓬 鲁广昊 | 2019 | 应用化学2019，36，8： | 3 |
| 2 | 空气暴露对基于吸湿绝缘层的C8-BTBT有机薄膜晶体管器件性能的影响显示文摘有机薄膜晶体管(OTFTs)通常对环境条件敏感,在空气中暴露时其性能往往会出现退化.本文分析了基于聚(4-乙基苯酚)-4,4’-(六氟异丙烯)二酞酸酐交联物绝缘层(PVP-HDA)的2,7-二辛基[1]苯并噻吩[3,2-b][1]苯并噻吩(C8-BTBT)柔性OTFTs在40%相对湿度的空气环境中暴露不同时间对器件性能的影响.研究发现,PVPHDA绝缘层材料在短时间40%相对湿度的空气下吸附空气中的水分后,器件的性能有所提升.其中,基于375 nm PVP-HAD绝缘层薄膜的柔性OTFTs在相对湿度为40%的空气中放置6小时后,校正后的平均迁移率(μ)由3.2 cm^2V^-1s^-1提高到5.1 cm^2V^-1s^-1,平均阈值电压(Vth)由-12.4 V降低到-9.3 V,开关比仍保持在104.结果表明,此类OTFT器件有望能够在空气环境中进行大面积制备,并展现出良好的应用前景. | 谢朋杉 刘天娇 何培 代国章 蒋杰 孙佳 阳军亮 | 2020 | Science China Materials2020，63，12： | 2 |
| 3 | Unveiling the role of Fe_(3)O_(4)in polymer spin valve near Verwey transition显示文摘The spinterface formed between ferromagnetic(FM)electrode and organic materials is vital for performance optimization in organic spin valve(OSV).Half-metallic Fe_(3)O_(4)with drastic change in structure,conductivity and magnetic property near Verwey transition can serve as an intrinsic spinterface regulator.However,such modulating effect of Fe_(3)O_(4)in OSV has not been comprehensively investigated,especially below the Verwey transition temperature(Tv).Here,we highlight the important role of Fe_(3)O_(4)electrode in reliable-working and controllable Fe_(3)O_(4)/P3HT/Co polymer spin valves by investigating the magnetoresistance(MR)above and below 7V.In order to distinguish between different contributions to charge transport and related MR responses,the systematic electronic and magnetic characterizations were carried out in full temperature range.Particularly,the first-order metal-insulator transition in Fe_(3)O_(4)has a dramatic effect on the MR enhancement of polymer spin valves at 7V.Moreover,both the conducting mode transformation and MR line shape modulation could be accomplished across 7V.This research renders unique scenario to multimodal storage by external thermodynamic parameters,and further reveals the importance of spin-dependent interfacial modification in polymer spin valves. | Shuaishuai Ding Yuan Tian Xiang Liu Ye Zou Huanli Dong Wenbo Mi Wenping Hu | 2021 | Nano Research2021，14，1： | 1 |
| 4 | Cornerstone of molecular spintronics: Strategies for reliable organic spin valves显示文摘Organic spin valve (OSV), one of the most promising and representative devices involving spin injection, transport and detection, has drawn tremendous attention owing to their ultra-long spin relaxation time in the field of molecular spintronics. Since the first demonstration of truly worked vertical OSV device in 2004, efforts in enhancement of high performance and pursuit of spin-related nature have been devoted in related field. It offers a new opportunity to develop the integrated flexible multi-functional arrays based on spintronics in the future. However, the unreliable working state in OSVs due to the lack of exploration on interface control will cause severe impact on the performance evaluation and further restrict their practical application. Herein, we focus on the recent progress in strategies for reliable fabrication and evaluation of typical OSVs in vertical configuration. Firstly, the challenges in protection of two spin interface properties and identification of spin-valve-like signals were proposed. Then, three points for attention including selection of bottom electrodes, optimization of organic spacer, and prevention of metal penetration to improve the device performance and reliability were mentioned. Particularly, various modified strategies to solve the “dead layer” issue were highlighted. Furthermore, we discussed the general protocols in the reliable evaluation of OSVs’ performance and transport mechanism identification. Notably, several key fundamentals resulting in spurious magnetoresistance (MR) response were illustrated. Finally, we also highlighted the future perspectives on spintronic devices of organic materials. | Shuaishuai Ding Yuan Tian Wenping Hu | 2021 | Nano Research2021，14，11： | 0 |
| 5 | 新型萘二甲酰亚胺基半导体/绝缘聚合物共混薄膜的微结构和电荷传输研究显示文摘采用新型萘二甲酰亚胺基半导体聚合物FN2200与绝缘聚合物聚苯乙烯(PS)通过溶液相共混,并采用旋涂法制备共混薄膜的有机场效应晶体管(OFET)。发现在FN2200中加入少量PS可显著提升共混薄膜器件的电子迁移率,然而随着PS含量的增加,载流子迁移率将急剧降低。通过氧等离子体刻蚀结合紫外-可见光吸收谱测量发现,FN2200/PS共混薄膜存在清晰的相分离结构,FN2200组分富集在在薄膜表面层而PS成分沉积在薄膜底部区。掠入射X射线衍射(GIXRD)结果发现,在FN2200中添加PS成分促使FN2200骨架链倾向于采取edge-on堆积方式,有利于载流子沿有机/介电层界面的横向传输。基于薄膜微结构表征结果,系统地解释了共混薄膜的OFET性能随PS含量的变化关系和内在机制。 | 张悦 周涵 张发培 | 2021 | 功能材料2021，52，9： | 0 |
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