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| 1 | Novel wide band gap alloyed semiconductors, x(LiGaO_2)_(1/2)-(1-x)ZnO, and fabrication of their thin films显示文摘Oxide semiconductor alloys of x(LiGaO2)1/2-(1-x)ZnO were fabricated by the solid state reaction between β-LiGaO2 and ZnO and rf-magnetron sputtering. For the solid state reaction, the wurtzite-type single phases were obtained in the composition range of x≤0.38. The formation range of the alloys was wider than that of the (Mg1-xZnx)O system, because the β-LiGaO2 possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. The electrical resistivity and energy band gap of the 0.38(LiGaO2)1/2-0.62ZnO alloyed ceramic were 0.45 Ωcm and 3.7 eV, respectively, at room temperature. For the alloying by sputtering, the films consisting of the wurtzite-type single phase were obtained over the entire composition range of x(LiGaO2)1/2-(1-x)ZnO. The energy band gap was controllable in the range from 3.3 to 5.6 eV. For the as-deposited film fabricated using the 0.4(LiGaO2)1/2- 0.6ZnO alloyed ceramic target, the energy band gap was 3.74 eV, and the electrical resistivity, carrier density and the Hall mobility at room temperature were 3.6 Ωcm, 3.4×1017 cm?3 and 5.6 cm2 V-1 s-1, respectively. | T. OMATA K. TANAKA A. TAZUKE K. NOSE S. OTSUKA-YAO-MATSUO | 2009 | Science China(Technological Sciences)2009，52，1： | 1 |
| 2 | Band engineering of B_2H_2 nanoribbons显示文摘Freestanding honeycomb borophene is unstable due to the electron-deficiency of boron atoms. B_2H_2 monolayer, a typical borophene hydride, has been predicted to be structurally stable and attracts great attention. Here, we investigate the electronic structures of B_2H_2 nanoribbons. Based on first-principles calculations, we have found that all narrow armchair nanoribbons with and without mirror symmetry(ANR-s and ANR-as, respectively) are semiconducting. The energy gap has a relation with the width of the ribbon. When the ribbon is getting wider, the gap disappears. The zigzag ribbons without mirror symmetry(ZNR-as) have the same trend. But the zigzag ribbons with mirror symmetry(ZNR-s) are always metallic. We have also found that the metallic ANR-as and ZNR-s can be switched to semiconducting by applying a tensile strain along the nanoribbon. A gap of 1.10 eV is opened under 16% strain for the 11.0-■ ANR-as. Structural stability under such a large strain has also been confirmed. The flexible band tunability of B_2H_2 nanoribbon increases its possibility of potential applications in nanodevices. | 雷宝 张余洋 杜世萱 | 2019 | Chinese Physics B2019，28，4： | 0 |
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