Analysis of Mg content of Zn_(1-x)Mg_xO film grown on sapphire substrates by plasma-assisted molecular beam epitaxy

查看全文 作　　者：[1]K.Ogata;[1]K.Koike;[1]S.Sasa;[1]M.Inoue;[1]M.Yano 机构地区：[1]Bio Venture Center,Osaka Institute of Technology,Asahiku,Osaka,535-8585,Japan,New Material Research Center,Osaka Institute of Technology,Asahiku,Osaka,535-8585,Japan,New Material Research Center,Osaka Institute of Technology,Asahiku,Osaka,535-8585,Japan Bio Venture Center,Osaka Institute of Technology,Asahiku,Osaka,535-8585,Japan,New Material Research Center,Osaka Institute of Technology,Asahiku,Osaka,535-8585,Japan Bio Venture Center,Osaka Institute of Technology,Asahiku,Osaka,535-8585,Japan,New Material Research Center,Osaka Institute of Technology,Asahiku,Osaka,535-8585,Japan Bio Venture Center,Osaka Institute of Technology,Asahiku,Osaka,535-8585,Japan 出　　处：《Science China(Technological Sciences)》索引2004年第47卷第2期,共7页 摘　　要：The Mg content of Zn1-xMgxO film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP) and electronic probe microanalysis (EPMA). A theoretical model for analyzing the difference in the Mg content between Zn-rich and Zn-deficient conditions in the growth process is established, and the mathematical relation between Mg content and the temperature of the Mg cell is formulated under Zn-rich condition. The formula derived is proven to be correct by experiments. 关 键 词：ZNMGO film, Mg content, molecular BEAM EPITAXY (MBE).