Annealing High Resistivity CdZnTe Wafers under Controlled Cd/Zn Partial Pressures

查看全文 作　　者：Wanwan LI, Wenbin SANG, Bin ZHANG, Jiahua MIN and Fang YUSchool of Material Science and Engineering, Jiading Campus, Shanghai University, Shanghai 201800, ChinaInstitute of Composites Materials, Shanghai Jiao Tong University, Shanghai 200030, China 出　　处：《Journal of Materials Science & Technology》索引2004年第20卷第6期,共4页 基　　金：The authors are grateful to the N ational Natural Science Foundation of China for financial support under Grant No.10175040. 摘　　要：In order to improve the performances of CdZnTe γ-ray detector, it is key issue to get the crystal with high quality. Equilibrium partial pressures, PCd and PZn, over Cd1-xZnx melt were estimated based on thermodynamic relationship and then Cd0.9Zn0.1Te wafers were annealed under controlled Cd/Zn partial pressures provided by Cd1-xZnx alloy reservoir. The experimental results show that when CdZnTe wafers are annealed under the equilibrium partial pressures provided by Cd0.99Zn0.01 alloy reservoir for 5 days or more at 1073 K, the resistivity of the wafer can be raised by 6 times and IR transmittance raised by 10% or more, the size and density of Te precipitates are greatly reduced.Moreover, losing of Zn from the surface can be avoided, which leads to improvement of the Zn radial distribution.In addition, the relationship between the electrical performances of the wafers and different controlled pressures is also discussed. 关 键 词：CDZNTE 晶片 Cd/Zn 压力控制 退火 γ射线检测