OPTICAL CHARACTERIZATION OF TiO_2 THIN FILM ON SILICON SUBSTRATE DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

查看全文 作　　者：[1]H.Q.Wang;[2]H.Shen;[3]D.C.Ba;[4]B.W.Wang;[5]L.S.Wen;[6]D.Chen

机构地区：[1]SchoolofMechanismandAutomobile,ShenyangInstituteofAeronauticalEngineering,Shenyang110034,Ghina//MechanismandAeronauticalCollege,NortheasternUniversity,Shenyang110004,China;[2]TheSchoolofPhysicsandEngineering,ZhongshanUniversity,Guangzhou510275,Ghina;[3]MechanismandAeronauticalCollege,NortheasternUniversity,Shenyang110004,China;[4]GuangzhouInstimdeofEnergyConversion,Guangzhou510070,China;[5]InstituteofMetalResearch,TheChineseAcademyofSciences,Shenyang110016,China;[6]MaterialandScienceEngineeringAcademy,SouthChinaUniversityofTechnology,Guangzhou510641,China

出　　处：《Acta Metallurgica Sinica(English Letters)》索引2005年第18卷第3期,共5页

基　　金：This work was supported by the National Natural Science Foundation of China(No,50376067);the Plan for Science&Technology Development of Guangzhou(2001-Z-117-01). 摘　　要：TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterizatio n of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC re active magnetron sputtering process from Ti target. The reflectivity of the film s was measured by UV-3101PC, and the index of refraction (n) and extinction coef ficient (k) were measured by n & k Analyzer 1200. 关键词：光学特征二氧化钛薄膜 DC反应磁溅射生长工艺

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OPTICAL CHARACTERIZATION OF TiO_2 THIN FILM ON SILICON SUBSTRATE DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

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