EFFECT OF THE DEFECT STATES DENSITY ON OPTICAL BAND GAP OF CdIn_(2)O_(4)THIN FILM

查看全文 作　　者：[1]H.S.San;[1]Z.G.Wu;[2]B.Li;[1]B.X.Feng 机构地区：[1]KeyLaboratoryforMagnetismandMagneticMaterialofMinistryofEducation,LanzhouUniversity,Lanzhou730000,China;[2]ShanghaiInstituteofTechnicalPhysics,TheChineseAcademyofSciences,Shanghai200083,China 出　　处：《Acta Metallurgica Sinica(English Letters)》索引2005年第18卷第3期,共8页 基　　金：This work was supported by the National Natural Science Foundation of China(No,69876018). 摘　　要：Transparent conducting oxides CdIn2O4 thin films were prepared by radio-frequenc y reactive sputtering from a Cd-In alloy target in Ar+O2 atmosphere. By transmis sion spectrum and Hall measurement for different samples prepared at different s ubstrate temperatures, it could be found that the carrier concentration would in crease with the decrease of substrate temperature, but absorption edge showed an abrupt variation from a blue shift to a red shift. Theoretically, the paper for mulated the effect of high-density point defects on band structures; it embodied the formation of band tailing, Burstein-Moss shift and band-gap narrowing. The density of holes will influence the magnitude of optical band gap and transmitta nce of light. Since extrapolation method does not fit degenerate semiconductor m aterials, a more accurate method of obtaining optical band gap is curve fitting. In addition, ionized impurities scattering is the main damping mechanism of the free electrons in CdIn2O4 films, the density of ionized impurities induced by a ltering substrate temperature will affect the carriers mobility. 关 键 词：铟镉氧薄膜 溅射工艺 电学性质 光学性能