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Residual Stress Measurement for Ion-implanted NiTi Alloy by Using Moiré Interferometry and Hole-drilling Combined Method

查看全文 作  者:WANG [1,2]Qiang;WANG [1,3]Biao;MA De-[1]cai;DAI Fu-[4]long 高影响力作者 机构地区:[1]School of Astronautics, Harbin Institute of Technology, Harbin 150001, China;[2]College of Physical Science and Technology, Heilongjiang University, Harbin 150080, China;[3]state Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, and School of Physics Science and Engineering, Sun Yat-sen University, Guangzhou 510275, China;[4]Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China高影响力机构 出  处:《Chinese Journal of Aeronautics》索引2006年第19卷第B12期,共4页高影响力期刊 基  金:National Natural Science Foundation of China (10572155) 摘  要:Residual stresses in ion-implanted NiTi alloy are measured by a combined method of Moiré interferometry and hole-drilling. Oxy-gen ions are implanted into the NiTi alloy under a voltage of 30 kV by a dose of 1.0×1017 ions/cm2 for one hour. Subsequently, in order to avoid dimensional error, a hole is drilled exactly in the center of the sample. The distribution of residual stresses around the hole is measured. It is indicated that the method which combines the Moiré interferometry with hole-drilling is able to be used to measure resid-ual stresses produced by ion implantation. 关 键 词:离子注入 镍钛形状记忆合金 残余应力测量 莫尔干涉测量 钻洞法
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