Photoluminescence Properties of Nanocrystalline 3C-SiC Films

查看全文 作　　者：YUWei LU Xue-qin LU Wan-bing HAN Li FU Guang-[1]sheng

机构地区：[1]College of Physics Science and Technology, Hebei University, Baoding 071002, China

出　　处：《Chinese Journal of Aeronautics》索引2006年第19卷第B12期,共5页

基　　金：Natural Foundation of Hebei province, China (Grant 503129 and E2006000999) 摘　　要：Nanocrystalline (nc) 3C-SiC films on the Si substrate were prepared by the helicon wave plasma enhanced chemical vapor deposi-tion (HW-PECVD) technique. With the SiH4-CH4 gas flow ratio changing, the films exhibit different photoluminescence (PL) character-istics. Under the stoichiometric condition, the PL peak redshift from 470 nm to 515 nm is detected with the increase of excitation wave-length, which can be attributed to the quantum confinement effect radiation of 3C-SiC nanocrystals of different sizes. However, the ap-pearance of an additional PL band at 436 nm in Si-rich film might be sourced back to the excess of Si defect centers in it. This is also the case for C-rich film for its PL band lying at 570 nm. The results above quoted indicate an important influence of gas flow ratio on the PL properties of the SiC films providing an effective guidance for analyzing the luminescence mechanism and exploring the high-efficiency light emission of the SiC films. 关键词：碳化硅薄膜纳米晶光致发光性质晶体缺陷

相关文献

参考文献（14）
引证文献（0）
耦合文献（21）

参考文献(14)

耦合文献(21)

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

Photoluminescence Properties of Nanocrystalline 3C-SiC Films

参考文献(14)

耦合文献(21)

用户提示