Silicon assistant carbothermal reduction for SiC powders

查看全文 作　　者：Kezhi Li Jian Wei Hejun Li Chuang Wang Gengsheng [1]Jiao

机构地区：[1]National Key Laboratory of Thermostructure Composite Materials, Northwestern Polytechnical University, Xi'an 710072, China

出　　处：《Journal of University of Science and Technology Beijing》索引2008年第15卷第4期,共5页

摘　　要：The silicon assistant method to increase the reaction yield of carbothermal reduction of silica at a lower temperature is reported. The effect of silicon on the carbothermal reduction process has been investigated in detail. Compared with traditional reduction, the introduction of silicon can change the reaction path and further increase the conversion of silicon carbide at a lower temperature. It is considered that the assistant reduction consists of three steps: vaporizing and melting of silicon, formation of silicon monoxide, and synthesis of silicon carbide. The morphology of the synthesized SiC powders through the silicon assistant method can be affected apparently by the experimental temperature. 关键词：碳化硅粉末固态反应碳热还原电子显微镜 X射线衍射

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Silicon assistant carbothermal reduction for SiC powders

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