ORNL-HRIBF 6GHz ECR离子源的最新结果(英文)

查看全文 作　　者：[1]Y.Kawai;[2]G.D.Alton 机构地区：[1]AccSys Technology,Pleasanton,CA 94566,USA;[2]Oak Ridge National Laboratory,Oak Ridge,TN 37831-6368,USA 出　　处：《Chinese Physics C》索引2007年第31卷第S1期,共5页 基　　金：Supported by the U.S.Department of Energy under contract DE-AC05-00OR22725 with UT-Battelle,LLC 摘　　要：Experimental studies were conducted to characterize and improve the performance of the flat-B ECR ion source.The emittance of the source was investigated for the first time.The output beam currents of high-charge-states of Ar(q>8)were nearly doubled by increasing the plasma electrode aperture from 4mm to 6mm in diameter.To investigate possible enhancements with broadband microwave radiation,a'white'Gaussian noise generator was employed with a TWT amplifier to generate microwave radiation with a bandwidth of~200MHz.The performance of the flat-B ECR ion source was found to be much better with narrow bandwidth radiation when the source was operated in the flat-B region.However,the ion beam intensities and charge state distributions were improved with the broadband radiation when the source was tuned off the flat-B region. 关 键 词：ECR ion source flat-B configuration multi-charged IONS broadband microwave EMITTANCE