High pressure luminescence studies of europium doped GaN

查看全文 作　　者：[1]K.Wisniewski;[2]W.Jadwisieńczak;[3]T.Thomas;[3]M.Spencer 机构地区：[1]Institute of of Experimental Physics, Gdańsk University, ul.Wita Stwosza 57, Gdańsk, 80-952, Poland;[2]School of Electrical Engineering and Computer Science, Ohio-University, Athens, OH, 45701, USA;[3]Second of Electrical and Computer Engineering, Cornell University, Ithaca NY, 14853, USA 出　　处：《Journal of Rare Earths》索引2009年第27卷第4期,共4页 基　　金：supported by the Polish Committee for Scientific Research (PBZ/MEiN/01/2006/39) 摘　　要：We reported on the high pressure luminescence spectra of polycrystalline Eu-doped GaN material synthesized in the reaction between alloys of gallium, bismuth and europium in ammonia atmosphere. The integrated luminescence intensity of the dominant Eu3+ ion transition (5D0→7F2) at 622 nm increased approximately one order of magnitude whereas its spectral position and line width did not change significantly between ambient and 6.8 GPa pressure, respectively. Moreover, material was characterized with photo-and cathodo-luminescence, and photoluminescence excitation spectra at different temperatures. It was found that the Eu3+ ions occupying substitu- tional Ga site created different centers which could be effectively excited with above band gap excitation and from excitons resonantly pho- toexcited at the I2 bound exciton energy. Furthermore, the less efficient Eu3+ ions excitation path existed through intrinsic impurities and defects generating shallow energy levels in the forbidden gap. It was proposed that reduction of the thermal quenching and consequent en- hancement of Eu3+ ion emission intensity resulted from stronger localization of bound exciton on RESI trap induced by applied pressure. 关 键 词：发光强度 铕掺杂 光致发光激发光谱 高压 GaN 氮化镓材料 铕离子 荧光光谱