Optimization of Polishing Parameters with Taguchi Method for LBO Crystal in CMP

查看全文 作　　者：Jun [1,2]Li;Yongwei [1]Zhu;Dunwen [1]Zuo;Yong [2]Zhu;Chuangtian [2]Chen

机构地区：[1]Jiangsu Key Laboratory of Precision and Micro-manufacturing Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;[2]Beijing Center for Crystal Research & of Sciences, Beijing 100080, China Development, Technical Institute of Physics and Chemistry, Chinese Academy

出　　处：《Journal of Materials Science & Technology》索引2009年第25卷第5期,共5页

基　　金：supported by the National Natural Science Foundation of China(No.50675104 and 50905086);Six High Talent Fund of Jiangsu Province(No.06-D-024);Talent Fund of NUAA(No.S0782-052) 摘　　要：Chemical mechanical polishing(CMP)was used to polish Lithium triborate(LiB3O5 or LBO)crystal.Taguchi method was applied for optimization of the polishing parameters.Material removal rate(MRR)and surface roughness are considered as criteria for the optimization.The polishing pressure,the abrasive concentration and the table velocity are important parameters which influence MRR and surface roughness in CMP of LBO crystal.Experiment results indicate that for MRR the polishing pressure is the most significant polishing parameter followed by table velocity;while for the surface roughness,the abrasive concentration is the most important one.For high MRR in CMP of LBO crystal the optimal conditions are:pressure 620 g/cm2, concentration 5.0 wt pct,and velocity 60 r/min,respectively.For the best surface roughness the optimal conditions are:pressure 416 g/cm2,concentration 5.0 wt pct,and velocity 40 r/min,respectively.The contributions of individual parameters for MRR and surface roughness were obtained. 关键词：化学机械抛光 LBO晶体田口方法 CMP 优化表面粗糙度材料去除率磨料浓度

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Optimization of Polishing Parameters with Taguchi Method for LBO Crystal in CMP

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