CuInSe_2 thin films obtained by pulse-plating electrodeposition technique with novel pulse wave

查看全文 作　　者：WANG XiaoLi WANG GuangJun TIAN BaoLi WAN ShaoMing DU [1]ZuLiang

机构地区：[1]Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, China

出　　处：《Chinese Science Bulletin》索引2010年第55卷第18期,共5页

基　　金：supported by the National Natural Science Foundation of China (90306010,10874040);the Cultivation Fund of the Key Scien-tific and Technical Innovation Project, Ministry of Education of China (708062) 摘　　要：CuInSe2 films were electrodeposited onto indium tin oxide(ITO) substrate in constant current mode using bell-like wave modulated square wave in aqueous solution.The films obtained at different pulse frequencies were characterized by scanning electron microscopy(SEM),X-ray energy dispersive spectroscopy(EDS) and X-ray diffraction(XRD).UV-Vis-NIR absorption spectro scopy was used to study the optical properties of these films.The results showed that the chalcopyrite phase CuInSe2 films with a smooth surface and stoichiometric composition could be obtained at appropriate pulse frequency.The crystallinity of CuInSe2 films could be further improved after annealing treatment.Despite this,we also found that the films obtained using the pulse-plating electrodeposition technique had a faster deposition rate and better film adhesion ability than that using the traditional CIS electrodeposition technique,which is significant to the low-cost CIS thin film solar cell production. 关键词：CuInSe2薄膜脉冲电镀技术 CulnSe2 脉冲波扫描电子显微镜近红外吸收光谱脉冲频率铟锡氧化物

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CuInSe_2 thin films obtained by pulse-plating electrodeposition technique with novel pulse wave

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