Fabrication of ZnO-based thick film varistors with high potential gradient

查看全文 作　　者：KE Lei JIANG Dongmei MA [1]Xueming

机构地区：[1]State Key Laboratory of Precision Spectroscopy, Department of Physics, East China Normal University, Shanghai 200062, China

出　　处：《Rare Metals》索引2010年第29卷第4期,共6页

基　　金：supported by the Nano Special Plan from Shanghai Municipal Science and Technology Plan of Commission (No 0852nm06000);the Shanghai Municipal Natural Science Foundation (No 08ZR1406700) 摘　　要：ZnO-based thick film varistors have been fabricated by Y2O3 doping and low-temperature sintering,of which the sample with the best electrical properties has a high potential gradient value of 3159.4 V/mm.The effects of Y2O3 doping concentration and sintering temperature on the potential gradient of the samples were systematically investigated.The results show that the sample with the best electrical properties can be obtained by doping 0.08 mol% Y2O3 and sintering at 725℃.Under these optimum preparation conditions,the leakage current and the nonlinear coefficient are found to be 36.4 μA and 13.1.The sample with the best electrical properties has a grain size of 1.290 μm,a single grain boundary voltage of 4.08 V,a barrier height of 0.81 eV,and a depletion layer width of 10.2 nm,which are determined by thermionic emission.Small grain size with good grain boundary characteristics is beneficial to improve the electrical properties of varistors and promote the potential gradient. 关键词：高电位梯度压敏电阻制备条件氧化锌厚膜基础低温烧结掺杂浓度

相关文献

参考文献（20）
引证文献（1）
耦合文献（4）

参考文献(20)

引证文献(1)

耦合文献(4)

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

Fabrication of ZnO-based thick film varistors with high potential gradient

参考文献(20)

引证文献(1)

耦合文献(4)

用户提示