Open-Gate Undoped-AIGaN-GaN HEMT Structure for pH Sensing Application

查看全文 作　　者：Sharifabad Maneea [1]Eizadi;Zainal Abidin Mastura [1]Shafinaz;Mustafa [1]Farahiyah;Hashim Abdul [1]Manaf;Abd Rahman Shaharin [1]Fadzli;Abdul Rahman Abdul [1]Rahim;Qindeel [2]Rabia;Omar Nurul [3]Afzan 机构地区：[1]Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia Skudai 81310, Johor, Malaysia;[2]Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia;[3]Telekom Research and Development, TM Innovation Centre, Cyberjaya 63000, Malaysia 出　　处：《材料科学与工程(中英文版)》索引2010年第4卷第7期,共6页 关 键 词：HEMT器件 GaN pH值 掺杂 遥感应用 结构 AN型 高电子迁移率晶体管