Temperature dependence of photoluminescence from self-organized Ge quantum dots with large size and low density

查看全文 作　　者：LI Hui HE Tao DAI LongGui WANG XiaoLi WANG WenXin CHEN [1]Hong

机构地区：[1]Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2011年第54卷第2期,共4页

基　　金：supported by the Ministry of Science and Technology of China, the National Natural Science Foundation of China (Grant Nos.10471026 and 10874212);the National High Technology Research and Development Program of China (Grant No 2006AA03A107) 摘　　要：Photoluminescence(PL) from self-organized Ge quantum dots(QDs) with large size and low density has been investigated over a temperature range from 10 to 300 K using continuous-wave(CW) optical excitation.The integrated PL intensity of QDs observed is negligible at about 10 K and rapidly increases with raising temperature up to 100 K.Through analyzing the PL experimental data of the QDs and wetting layer(WL),we provide direct evidence that there exists a potential barrier,arising from the greater compressive strain surrounding large QDs,which could trap carriers in WL at low temperatures and could be overcome via increasing temperature. 关键词：GE量子点光致发光温度范围大尺寸自组织高密度发光强度实验数据

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Temperature dependence of photoluminescence from self-organized Ge quantum dots with large size and low density

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