High Nitrogen Pressure Solution (HNPS) growth of GaN on 2 inch free standing GaN substrates

查看全文 作　　者：M.BO[1]KOWSKI;[1]I.GRZEGORY;[1]B.LUCZNIK;[1]T.SOCHACKI;M.KRY[1]KO;[1]G.KAMLER;[1]S.POROWSKI

机构地区：[1]Institute of High Pressure Physics PAS

出　　处：《Science China(Technological Sciences)》索引2011年第54卷第1期,共5页

基　　金：supported by the European Union within European Regional Development Fund,through grant Innovative Economy (POIG.01.01.02-00-008/08) 摘　　要：Recent results of High Nitrogen Pressure Solution (HNPS) growth of GaN crystals deposited on and separated from 2 inch,and smaller,GaN substrates grown by Hydride Vapor Phase Epitaxy (HVPE) have been presented. The influence of the c-plane bowing in the initial substrate on quality,rate and mode of growth by HNPS method has been analyzed in details. 关键词：氮化镓晶体生长压溶高氮自由站氢化物气相外延基板 HVPE

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High Nitrogen Pressure Solution (HNPS) growth of GaN on 2 inch free standing GaN substrates

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