CeO_2 thin films grown on biaxially textured nickel(001)

查看全文 作　　者：WANG Rongping, XIONG Xuming, Guo Xiangxin, ZHOU Yueliang, L Huibin, PAN Shaohua, CHEN Zhenghao and YANG Guozhen Laboratory of Optical Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Ch 出　　处：《Chinese Science Bulletin》索引1998年第43卷第20期,共5页 摘　　要：CeO\-2 films have been grown on biaxially textured Ni substrates at various temperatures. The results show that CeO\-2 films without IBAD are dominated by (111) orientation from room temperature to 800℃ while the preferential orientation of CeO\-2 films with IBAD is (001) at lower deposition temperature and (111) at deposition temperature higher than 450℃. CeO\-2 films with better in_plane texture and out_of_plane orientation can be grown at 360℃ with 240 eV ion energy and 200 μA/cm\+2 ion current density. 关 键 词：CeO\-2 FILMS BIAXIAL nickel.