FORMATION AND PROPERTIES 0F POROUS SILICON LAYER ON HEAVILY DOPED n-Si

查看全文 作　　者：Rui Bao JIA;Shi Xun WANG;Guo Xheng LI Department of Chemistry, Shandong University, Jinan 250100 出　　处：《Chinese Chemical Letters》索引1993年第4卷第7期,共2页 摘　　要：The anodic voltammetric curves of heavily doped n-Si in HF solution, onwhich three different regions have emerged, and were plotted, A porous siliconlayer with fine morphology was formed in linear region. 关 键 词：anodic heavily porous DISSOLUTION IRRADIATION emerged immersed ETHANOL TETRA ISOLATION