INVESTIGATION ON RESONANT TUNNELING IN GaAs/Al_xGa_(1-x)As DBD USING TUNNELING SPECTROSCOPY

查看全文 作　　者：[1]陈弘毅;[2]K.L.Wang 机构地区：[1]Institute of Microelectronies,Tsinghua University,Beijing,100084;[2]Device Research Laboratory,Electrical Engineering Department,University of California at Los Angeles,Los Angeles,CA.90024,U.S.A 出　　处：《Journal of Electronics(China)》索引1990年第7卷第1期,共7页 摘　　要：Experimental investigation on resonant tunneling in various GaAs/Al_xGa_1-xAsdouble barrier single well structures has been performed by using tunneling spectroscopy atdifferent temperatures.The results show that in addition to resonant tunneling via GaAs wellstate confined by Al_xGa_1-xAs Γ-point barrier there exists resonant tunneling via GaAs well stateconfined by Al_xGa_1-xAs X-point barrier for both indirect(x>0.4)and direct(x<0.4)cases. 关 键 词：RESONANT TUNNELING Quantum WELL Energy BAND profile