Defect aggregates in the Sr_2MgSi_2O_7 persistent luminescence material

查看全文 作　　者：Jorma Hls[1,2];Taneli [1,3]Laamanen;Mika [1,2]Lastusaari;Pavel [4]Novák

机构地区：[1]Department of Chemistry,University of Turku;[2]Turku University Centre for Materials and Surfaces(MatSurf);[3]Graduate School of Materials Research(GSMR);[4]Institute of Physics,Academy of Sciences of the Czech Republic

出　　处：《Journal of Rare Earths》索引2011年第29卷第12期,共7页

基　　金：Project supported by Turku University Foundation;Jenny and Antti Wihuri Foundation (Finland);the Academy of Finland (contract #117057/2006,#134459/2010);research mobility agreements (112816/2006/JH,116142/2006/JH,123976/2007/TL) between the Academy of Finland and the Academy of Sciences of the Czech Republic;the Czech research project (AVOZ10100521 (PN)) 摘　　要：The crystal and electronic structure of the Eu2+ doped and defect containing Sr2MgSi2O7 persistent luminescence material were studied using the density functional theory(DFT) .The defects may act as energy storage or even luminescence quenching centres in these materials,however their role is very difficult to confirm experimentally.The probability of vacancy formation was studied using the total en-ergy of the defect containing host.Significant structural modifications in the environment of the isolated defects,especially the strontium va-cancy,as well as defect aggregates were found.The experimental band gap energy of Sr2MgSi2O7 was well reproduced by the calculations.The defect induced electron traps close to the host's conduction band were found to act as energy storage sites contributing to its efficient per-sistent luminescence.The interactions between the defects were found to modify both the Eu2+ 4f7 ground state energy as well as the trap structure.The effect of charge compensation induced by the rare earth co-doping on the defect structure and energy storage properties of the persistent luminescence materials was discussed. 关键词：材料缺陷发光材料聚集密度泛函理论储能特性电子结构电子陷阱结构性调整

相关文献

参考文献（40）
引证文献（2）
耦合文献（4）

参考文献(40)

引证文献(2)

耦合文献(4)

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

Defect aggregates in the Sr_2MgSi_2O_7 persistent luminescence material

参考文献(40)

引证文献(2)

耦合文献(4)

用户提示