Single event transient pulse attenuation effect in three-transistor inverter chain

查看全文 作　　者：CHEN [1]JianJun;CHEN [1]ShuMing;LIANG [1]Bin;LIU [1]FanYu

机构地区：[1]School of Computer,National University of Defense Technology,Changsha 410073,China

出　　处：《Science China(Technological Sciences)》索引2012年第55卷第4期,共5页

基　　金：supported by the Key Program of the National Natural Science Foundation of China (Grant No.60836004);the National Natural Science Foundation of China (Grant Nos.61006070,61076025) 摘　　要：In this paper, compared with two-transistor (2T) inverter chain, the production and propagation of P-hit single event transient (SET) in three-transistor (3T) inverter chain is studied in depth based on three-dimensional numerical simulations in a 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. The pulse attenuation effect is found in 3T inverter chain, and the pulse can not completely propagate through the inverter chain as LET increases. The discovery will provide a new insight into SET hardened design, the 3T inverter layout structure (or similar layout structures) will be a better method in integrated circuits (ICs) design in radiation environment. 关键词：晶体管逆变器瞬态脉冲衰减效应单事件互补金属氧化物半导体链三维数值模拟布局结构

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Single event transient pulse attenuation effect in three-transistor inverter chain

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