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Advantage of dual wavelength light-emitting diodes with dip-shaped quantum wells

查看全文 作  者:XU [1]YiQin;FAN [1]GuangHan;ZHOU [1]DeTao;LI [1]Xin;LU [1]TaiPing;ZHAO [1]Fang;ZHANG [1]YunYan;ZHENG [1]ShuWen;GONG [1]ChangChun 高影响力作者 机构地区:[1]Institute of Opto-Electronic Materials and Technology,South China Normal University,Guangzhou 510631,China高影响力机构 出  处:《Chinese Science Bulletin》索引2012年第57卷第20期,共5页高影响力期刊 基  金:supported by the Project for the Combination of Production and Research Guided by the Ministry of Education of Guangdong Province in2009(2009B090300338);the LED Industrial Projects of Special Funds for Strategic Emerging Industries in2011,Guangdong Province(2010A081002005);the National Natural Science Foundation of China(61176043) 摘  要:Dual-wavelength light-emitting diodes (DW-LEDs) with dip-shaped quantum wells have been studied by numerical simulation.The emission spectra,light output power,carrier concentration in the quantum wells and internal quantum efficiency are investigated.The simulation results indicate that the DW-LEDs with dip-shaped quantum wells perform better than conventional LEDs with rectangular quantum wells in terms of light output power,leakage current and efficiency droop.These improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the dip-shaped quantum wells. 关 键 词:发光二极管 量子阱 双波长 光输出功率 优势 载流子浓度 数值模拟 发射光谱
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