Contactless Magnetoresistance in Large Area Epitaxial Graphene Grown on SiC Substrates

查看全文 作　　者：Tymoteusz [1,3]Ciuk;Jerzy [1]Krupka;Cezariusz [2]Jastrzebski;Jaroslaw [2]Judek;Wlodek [3]Strupinski;Serkan [4]Butun;Ekmel [4]Ozbay;Mariusz [2]Zdrojek 机构地区：[1]Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland;[2]Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland;[3]Institute of Electronic Materials Technology, Wolczynska 1335, 01-919 Warsaw, Poland;[4]Department of Physics, Department of Electrical and Electronics Engineering, Nanotechnology Research Center, BilkentUniversity, Bilkent, 06800 Ankara, Turkey 出　　处：《材料科学与工程(中英文A版)》索引2012年第2卷第7期,共5页 关 键 词：非接触式 SIC 石墨 衬底 面积 化学气相沉积方法 磁电阻效应 生长