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MgO(001) barrier based magnetic tunnel junctions and their device applications

查看全文 作　　者：HAN [1]XiuFeng;ALI Syed [1]Shahbaz;LIANG [1]ShiHeng 高影响力作者 机构地区：[1]State Key Laboratory of Magnetism,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences高影响力机构 出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2013年第56卷第1期,共32页高影响力期刊 基　　金：supported by the State Key Project of Fundamental Research of the Ministry of Science and Technology(Grant No. 2010CB934400);the National Natural Science Foundation of China (Grant Nos.10934099,51021061,and 11104338);the National Science Fund for Distinguished Young Scholars(Grant No.50325104);the International Collaborative Research Programs between NSFC and EPSRC of the United Kingdom(Grant No.10911130234);between NSFC and ANR of France(Grant No.F040803) 摘　　要：Spintronics has received a great attention and significant interest within the past decades,and provided considerable and remarked applications in industry and electronic information etc.In spintronics,the MgO based magnetic tunnel junction(MTJ) is an important research advancement because of its physical properties and excellent performance,such as the high TMR ratio in MgO based MTJs.We present an overview of more than a decade development in MgO based MTJs.The review contains three main sections.(1) Research of several types of MgO based MTJs,including single-crystal MgO barrier based-MTJs,double barrier MTJs,MgO based MTJs with interlayer,novel electrode material MTJs based on MgO,novel barrier based MTJs,novel barrier MTJs based on MgO,and perpendicular MTJs.(2) Some typical physical effects in MgO based MTJs,which include six observed physical effects in MgO based MTJs,namely spin transfer torque(STT) effect,Coulomb blockade magnetoresistance(CBMR) effect,oscillatory magnetoresistance,quantum-well resonance tunneling effect,electric field assisted magnetization switching effect,and spincaloric effect.(3) In the last section,a brief introduction of some important device applications of MgO based MTJs,such as GMR & TMR read heads and magneto-sensitive sensors,both field and current switching MRAM,spin nano oscillators,and spin logic devices,have been provided. 关 键 词：磁性隧道结 应用程序 氧化镁 自旋电子学 设备 屏障 物理性能 MGO
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