Doping Silicon Wafers with Boron by Use of Silicon Paste

查看全文 作　　者：Yu [1]Gao;Shu [1]Zhou;Yunfan [1]Zhang;Chen [1]Dong;Xiaodong [1]Pi;Deren [1]Yang

机构地区：[1]State Key Laboratory of Silicon Materials,Department of Materials Science and Engineering,Zhejiang University

出　　处：《Journal of Materials Science & Technology》索引2013年第29卷第7期,共3页

基　　金：financial support from the National Basic Research Program of China('973 Program',Grant No.2013CB632101);the National Natural Science Foundation of China(Grant No.50902122);the R&D Program of Ministry of Education of China(Grant No.62501040202);the Innovation Team Project of Zhejiang Province(Grant No.2009R50005);the Xinmiao Program of Zhejiang Province,China 摘　　要：In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste. Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy(SIMS) and sheet resistance measurements. 关键词：硅晶片硼掺杂二次离子质谱仪粘贴功能硅纳米颗粒 P型掺杂等离子体纳米粒子

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Doping Silicon Wafers with Boron by Use of Silicon Paste

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