Strain effects on valence bands of wurtzite ZnO

查看全文 作　　者：QIAO [1,2]LiPing;CHAI [1]ChangChun;JIN [1]Zhao;YANG [1]YinTang;MA [1]ZhenYang

机构地区：[1]Key Lab of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University;[2]School of Information Engineering,Tibet University for Nationalities

出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2013年第56卷第9期,共5页

基　　金：supported by the National Natural Science Foundation of China (Grant Nos.60776034,61162025);the Youth Scholar Training Plan of Tibet University for Nationalities (Grant No.13myQP10);the Major Program Training Plan of Tibet University for Nationalities (Grant No.12myZP02) 摘　　要：Based on the k.p theory of Luttinger-Kohn and Bir-Pikus,analytical E-k solutions for the valence band of strained wurtzite ZnO materials are obtained.Strain effects on valence band edges and hole effective masses in strained wurtzite ZnO materials are also discussed.In comparison with unstrained ZnO materials,apparent movement of valence band edges such as 'light hole band','heavy hole band' and 'crystal splitting band' at Γ point is found in strained wurtzite ZnO materials.Moreover,effective masses of 'light hole band','heavy hole band' and 'crystal splitting band' for strained wurtzite ZnO materials as the function of stress are given.The analytical results can provide a theoretical foundation for the understanding of physics of strained ZnO materials and its applications with the framework for an effective mass theory. 关键词：应变效应 ZNO 价带材料应力有效质量理论纤锌矿视运动光孔

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Strain effects on valence bands of wurtzite ZnO

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