P-type double gate junctionless tunnel field effect transistor

查看全文 作　　者：[1]M.W.Akram;Bahniman [1,2]Ghosh;Punyasloka [1]Bal;Partha [1]Mondal

机构地区：[1]Department of Electrical Engineering,Indian Institute of Technology Kanpur;[2]Microelectronics Research Center

出　　处：《Journal of Semiconductors》索引2014年第35卷第1期,共7页

摘　　要：We have investigated the 20 nm p-type double gate junctionless tunnel field effect transistor(PDGJLTFET) and the impact of variation of different device parameters on the performance parameters of the P-DGJLTFET is discussed. We achieved excellent results of different performance parameters by taking the optimized device parameters of the P-DGJLTFET. Together with a high-k dielectric material(TiO2/ of 20 nm gate length, the simulation results of the P-DGJLTFET show excellent characteristics with a high ION of 0.3 mA/ m,a low IOFF of 30 fA/ m, a high ION=IOFF ratio of 1 1010, a subthreshold slope(SS) point of 23 mV/decade,and an average SS of 49 mV/decade at a supply voltage of –1 V and at room temperature, which indicates that PDGJLTFET is a promising candidate for sub-22 nm technology nodes in the implementation of integrated circuits. 关键词：场效应晶体管隧道双门 P型性能参数参数变化设备参数二氧化钛

相关文献

参考文献（26）
引证文献（1）
耦合文献（0）

参考文献(26)

引证文献(1)

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

P-type double gate junctionless tunnel field effect transistor

参考文献(26)

引证文献(1)

用户提示