Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

查看全文 作　　者：Ibrahim Y[1]cedag;Ahmet [2]Kaya;Semsettin [3]Altindal;Ibrahim [4]Uslu 机构地区：[1]Department of Computer Engineering, Technology Faculty, Duzce University;[2]Department of Opticianry, Vocationel School of Medical Sciences, Turgut Ozal University;[3]Department of Physics, Faculty of Science and Arts, Gazi University;[4]Department of Chemistry, Faculty of Science and Arts, Gazi University 出　　处：《Chinese Physics B》索引2014年第23卷第4期,共6页 摘　　要：In order to investigate of cobalt-doped interfacial polyvinyl alcohol(PVA) layer and interface trap(Dit) effects, Al/pSi Schottky barrier diodes(SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carried out in the frequency and voltage ranges of30 kHz–300 kHz and-5 V–6 V, respectively. C–V or ε–V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance(Rs), and interfacial layer. Both the real and imaginary parts of dielectric constant(ε and ε) and electric modulus(M and M),loss tangent(tan δ), and AC electrical conductivity(σac) are investigated, each as a function of frequency and applied bias voltage. Each of the M versus V and M versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Ditand interfacial PVA layer, both capacitance(C) and conductance(G/w)values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of Al/Co-doped PVA/p-Si(MPS) type SBD. In addition, the voltage-dependent profile of Ditis obtained from the low–high frequency capacitance(CLF–CHF) method. 关 键 词：电压依赖性 介电性能 高频率 PVA 钴掺杂 Si 电气 室温