Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

查看全文 作　　者：CUI [1]Xiao;ZHANG [1]Can;LIANG [1]Song;ZHU Hong-[1]Liang;HOU Lian-[2]Ping

机构地区：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;[2]School of Engineering, University of Glasgow, Oakfield Avenue, Glasgow, G12 8LT, UK

出　　处：《Chinese Physics Letters》索引2014年第31卷第4期,共4页

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61320106013, 61021003 and 61090392. 关键词：光子集成电路带隙杂质 INP 增强型 INGAASP 工程混插

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Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

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