Hetero-gate-dielectric double gate junctionless transistor(HGJLT)with reduced band-to-band tunnelling effects in subthreshold regime

查看全文 作　　者：Bahniman [1,2]Ghosh;Partha [2]Mondal;[2]M.W.Akram;Punyasloka [2]Bal;Akshay Kumar [2]Salimath

机构地区：[1]Microelectronics Research Center,10100 Burnet Road,University of Texas at Austin;[2]Department of Electrical Engineering,Indian Institute of Technology Kanpur

出　　处：《Journal of Semiconductors》索引2014年第35卷第6期,共7页

摘　　要：We propose a hetero-gate-dielectric double gate junctionless transistor(HGJLT), taking high-k gate insulator at source side and low-k gate insulator at drain side, which reduces the effects of band-to-band tunnelling(BTBT) in the sub-threshold region. A junctionless transistor(JLT) is turned off by the depletion of carriers in the highly doped thin channel(device layer) which results in a significant band overlap between the valence band of the channel region and the conduction band of the drain region, due to off-state drain bias, that triggers electrons to tunnel from the valence band of the channel region to the conduction band of the drain region leaving behind holes in the channel.These effects of band-to-band tunnelling increase the sub-threshold leakage current, and the accumulation of holes in the channel forms a parasitic bipolar junction transistor(n–p–n BJT for channel JLT) in the lateral direction by the source(emitter), channel(base) and drain(collector) regions in JLT structure in off-state.The proposed HGJLT reduces the subthreshold leakage current and suppresses the parasitic BJT action in off-state by reducing the band-to-band tunnelling probability. 关键词：结型晶体管亚阈值电介质栅极隧穿效应带带隧穿 N通道绝缘体

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Hetero-gate-dielectric double gate junctionless transistor(HGJLT)with reduced band-to-band tunnelling effects in subthreshold regime

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