A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

查看全文 作　　者：Shiromani Balmukund [1]Rahi;Bahniman [2]Ghosh;Pranav [1]Asthana

机构地区：[1]Department of Electrical Engineering,Indian Institute of Technology Kanpur;[2]Microelectronics Research Center,10100,Burnet Road,Bldg.160,University of Texas at Austin

出　　处：《Journal of Semiconductors》索引2014年第35卷第11期,共5页

摘　　要：We propose a heterostructure junctionless tunnel field effect transistor(HJL-TFET) using Al Ga As/Si.In the proposed HJL-TFET,low band gap silicon is used in the source side and higher band gap Al Ga As in the drain side.The whole Al Ga As/Si region is heavily doped n-type.The proposed HJL-TFET uses two isolated gates(named gate,gate1) with two different work functions(gate=4.2eV,gate1=5.2eV respectively).The 2-D nature of HJL-TFET current flow is studied.The proposed structure is simulated in Silvaco with different gate dielectric materials.This structure exhibits a high on current in the range of 1.4106Aμm,the off current remains as low as 9.11014Aμm.So I ON/I OFF ratio of ~108is achieved.Point subthreshold swing has also been reduced to a value of ~41 m V/decade for TiO2 gate material. 关键词：异质结构隧道 n型 FET ALGAAS 电介质材料基础仿真

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A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

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