Effect of defects on the electronic properties of WS_2 armchair nanoribbon

查看全文 作　　者：Bahniman [1,2]Ghosh;Aayush [2]Gupta 机构地区：[1]Microelectronics Research Center, 10100, Burnet Road, Bldg. 160, University of Texas at Austin, Austin, TX, 78758, USA;[2]Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India 出　　处：《Journal of Semiconductors》索引2015年第36卷第1期,共4页 摘　　要：We have studied the WS2 armchair nanoribbon with various defects like vacancy, edge roughness, twist,turn and ripple and compared how the bandgap changes due to such defects with the bandgap of a nanoribbon with no defects. Materials like WS2 and other transition metal dichalcogenides(MX2) have a graphene like layered structure with hexagonal rings and have properties that have attracted a lot of interest. Hence it is essential to study the changes in the band structure of the nanoribbon of WS2 due to the inclusion of defects like vacancy, rough edge,wrap, ripple and twist for making any device based on WS2. 关 键 词：WS2 纳米带 缺陷 扶手 电特性 似层状结构 硫属化物 过渡金属