Temperature effect on hetero structure junctionless tunnel FET

查看全文 作　　者：Shiromani Balmukund [1]Rahi;Bahniman [1,2]Ghosh;Bhupesh [1]Bishnoi

机构地区：[1]Department of Electrical Engineering,Indian Institute of Technology Kanpur;[2]Microelectronics Research Center, University of Texas at Austin

出　　处：《Journal of Semiconductors》索引2015年第36卷第3期,共5页

摘　　要：For the first time, we investigate the temperature effect on Al Ga As/Si based hetero-structure junctionless double gate tunnel field effect transistor. Since junctionless tunnel FET is an alternative substitute device for ultra scaled deep-submicron CMOS technology, having very good device characteristics such as an improved subthreshold slope(< 60 m V/decade at 300 K) and very small static leakage currents. The improved subthreshold slope and static leakage current confirms that it will be helpful for the development of future low power switching circuits. The 2-D computer based simulation results show that OFF-state leakage current is almost temperature independent for the proposed device structure. 关键词：硅基异质结构温度效应场效应管隧道场效应晶体管 CMOS技术泄漏电流替代装置

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Temperature effect on hetero structure junctionless tunnel FET

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