Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect

查看全文 作　　者：Shoubhik [1]Gupta;Bahniman [1]Ghosh;Shiromani Balmukund [1]Rahi

机构地区：[1]Department of Electrical Engineering, Indian Institute of Technology Kanpur

出　　处：《Journal of Semiconductors》索引2015年第36卷第2期,共6页

摘　　要：We investigate the quantum-mechanical effects on the electrical properties of the double-gate junctionless field effect transistors. The quantum-mechanical effect, or carrier energy-quantization effects on the threshold voltage, of DG-JLFET are analytically modeled and incorporated in the Duarte et al. model and then verified by TCAD simulation. 关键词：量子力学效应场效应晶体管解析模型双栅紧凑阈值电压机械效应量化效应

相关文献

参考文献（7）
引证文献（1）
耦合文献（1）

参考文献(7)

引证文献(1)

耦合文献(1)

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect

参考文献(7)

引证文献(1)

耦合文献(1)

用户提示