Ultralow-power high-speed flip-flop based on multimode Fin FETs

查看全文 作　　者：Kai [1]LIAO;Xiaoxin [1]CUI;Nan [1]LIAO;Tian [1]WANG;Dunshan [1]YU;Xiaole [2]CUI

机构地区：[1]Institute of Microelectronics, Peking University;[2]Key Laboratory of Integrated Microsystems, Shenzhen Graduate School, Peking University

出　　处：《Science China(Information Sciences)》索引2016年第59卷第4期,共11页

基　　金：supported by National Natural Science Foundation of China (Grant No. 61306040);National Basic Research Program of China (973) (Grant No. 2015CB057201);Beijing Natural Science Foundation (Grant No. 4152020);R&D project of Shenzhen Government, China (Grant Nos. JCYJ20140417144423194, JCYJ20140417144423198) 摘　　要：In this paper, we first reconstruct a novel planar static contention-free single-phase-clocked flipflop(S2CFF) based on high-performance fin-type field-effect transistors(FinF ETs) to achieve high speed and ultralow power consumption. Benefiting from better control of the conductive channel, the shorted-gate(SGmode) FinF ET flip-flop obtains a persistent reduction of 56.7% in average power consumption as well as a considerable improvement in timing performance at a typical 10% data switching activity, while the low-power(LP-mode) FinF ET flip-flop promotes the power reduction to 61.8% without appreciable degradation in speed.However, through further analysis of the simulation results, we have revealed an unnecessary energy loss caused by the redundant leaps of internal nodes at the static input ‘0', which has a noticeable negative impact on total power consumption at low data switching activity. In order to overcome this defect, a conditional precharge technique is introduced to control the charging path, and we demonstrate that the independent-gate(IG-mode)FinF ET is the best option for the added control transistor. The verification results indicate that our optimization reduces the power consumption by more than 50% at low data switching activity with an acceptable area and setup time penalty compared with that of LP-mode FinF ET flip-flop. 关键词：超低功耗 T触发器鳍片 FET 场效应晶体管多模时间性能数据交换

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Ultralow-power high-speed flip-flop based on multimode Fin FETs

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