Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film

查看全文 作　　者：Da [1]Chen;Shihua [1]Huang;Lü [1]He

机构地区：[1]Physics Department,Zhejiang Normal University,Jinhua 321004,China

出　　处：《Journal of Semiconductors》索引2017年第38卷第4期,共4页

基　　金：Project supported by the Natural Science Foundation of Zhejiang Province(No.LY17F040001);the Open Project Program of Surface Physics Laboratory(National Key Laboratory)of Fudan University(No.KF2015_02);the Open Project Program of National Laboratory for Infrared Physics,Chinese Academy of Sciences(No.M201503);the Zhejiang Provincial Science and Technology Key Innovation Team(No.2011R50012);the Zhejiang Provincial Key Laboratory(No.2013E10022) 摘　　要：SiO_xN_y films with different oxygen concentrations were fabricated by reactive magnetron sputtering,and the resistive switching characteristics and conduction mechanism of Cu/SiO_xN_y/ITO devices were investigated.The Cu/SiO_xN_y/ITO device with SiO_xN_y deposited in 0.8-sccm O_2 flow shows a reliable resistive switching behavior,including good endurance and retention properties.As the conductivity of SiO_xN_y increases with the increase of the oxygen content dynamical electron trapping and detrapping is suggested to be the conduction mechanism.The temperature dependent I-V measurement indicates that the carrier transport can be ascribed to the hopping conduction rather than the metallic conductive filament. 关键词：silicon oxynitride resistive random access memory oxygen concentration

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Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film

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