Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

查看全文 作　　者：[1]D.K.Panda;[1]T.R.Lenka

机构地区：[1]Microelectronics and VLSI Design Group, Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam 788010, India

出　　处：《Journal of Semiconductors》索引2017年第38卷第6期,共6页

基　　金：TEQIP-II funded Silvaco TCAD;SMDP-II funded Cadence Tool in Department of Electronics and Communication Engineering,NIT Silchar for carrying out the research work 摘　　要：An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre,in order to predict device characteristics such as threshold voltage,drain current and gate capacitance.The drain current model incorporates important physical effects such as velocity saturation,short channel effects like DIBL(drain induced barrier lowering),channel length modulation(CLM),and mobility degradation due to self-heating.The predicted I_d–V_(ds),I_d–V_(gs),and C–V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model.The developed model was then utilized to design and simulate a single-pole single-throw(SPST)RF switch. 关键词：ALGAN/GAN HEMT器件射频开关增强型仿真建模射频电路 VERILOG-A CADENCE

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Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

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