Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

查看全文 作　　者：Xiaozhi [1,2]Xu;Zhihong [1,2]Zhang;Jichen [3]Dong;Ding [3]Yi;Jingjing [1]Niu;Muhong [1]Wu;Li [4]Lin;Rongkang [5]Yin;Mingqiang [1]Li;Jingyuan [4]Zhou;Shaoxin [1]Wang;Junliang [6]Sun;Xiaojie [4,5]Duan;Peng [1,4,7]Gao;Ying [7,8]Jiang;Xiaosong [1,7]Wu;Hailin [4]Peng;Rodney S. [3,9]Ruoff;Zhongfan [4]Liu;Dapeng [1,7,10]Yu;Enge [7,8]Wang;Feng [3,11]Ding;Kaihui [1,4,7]Liu

机构地区：[1]State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;[2]Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China;[3]Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), UIsan 689-798, Republic of Korea;[4]Centre for Nanochemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China;[5]Department of Biomedical Engineering, College of Engineering, Peking University, Beijing 100871, China;[6]College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China;[7]Collaborative Innovation Centre of Quantum Matter, Beijing 100871, China;[8]International Centre for Quantum Materials, Peking University, Beijing 100871, China;[9]Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea;[10]Department of Physics, South University of Science and Technology of China, Shenzhen 518055, China;[11]School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea

出　　处：《Science Bulletin》索引2017年第62卷第15期,共7页

基　　金：supported by National Key R&D Program of China (2016YFA0300903, 2016YFA0300802, 2014CB932500 and 2016YFA0200101);National Natural Science Foundation of China (51522201, 11474006, 11327902, 11234001, 21525310, 91433102 and 21573186);Postdoctoral Innovative Personnel Support Program (BX201700014);National Program for Thousand Young Talents of China and the Institute for Basic Science (IBS-R019-D1) of Korea 摘　　要：A foundation of the modern technology that uses single-crystal silicon has been the growth of highquality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality(ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of(5 ×50) cm^2 dimension with >99% ultra-highly oriented grains.This growth was achieved by:(1) synthesis of metre-sized single-crystal Cu(1 1 1) foil as substrate;(2)epitaxial growth of graphene islands on the Cu(1 1 1) surface;(3) seamless merging of such graphene islands into a graphene film with high single crystallinity and(4) the ultrafast growth of graphene film.These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(1 1 1) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains(if any), has a mobility up to ~23,000 cm^2 V^(-1)s^(-1)at 4 K and room temperature sheet resistance of ~230 Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost. 关键词：外延生长单晶硅工业级石墨铜箔尺寸 CU(111) 现代技术

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Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

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