Black phosphorus induced photo-doping for high-performance organic-silicon heterojunction photovoltaics

查看全文 作　　者：Zhouhui [1]Xia;Pengfei [1]Li;Yuqiang [1]Liu;Tao [1]Song;Qiaoliang [2]Bao;Shuit-Tong [1]Lee;Baoquan [1]Sun

机构地区：[1] Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials(FUNSOM),Soochow University, Suzhou 215123, China;[2] Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia

出　　处：《Nano Research》索引2017年第10卷第11期,共9页

基　　金：This work was supported by the National Basic Research Program of China (973 Program) (No. 2012CB932402), National Natural Science Foundation of China (Nos. 91123005 and 61674108), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, the Priority Academic Program Development of Jiangsu Higher Education Institutions and Collaborative Innovation Centre of Suzhou Nano Science and Technology.

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Black phosphorus induced photo-doping for high-performance organic-silicon heterojunction photovoltaics

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