Silicon nanowire CMOS NOR logic gates featuring onevolt operation on bendable substrates

查看全文 作　　者：Jeongje [1,2]Moon;Yoonjoong [1]Kim;Doohyeok [1]Lim;Sangsig [1]Kim 机构地区：[1]Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea;[2]LED PKG Development Group, Samsung Electronics Co. Ltd., 1 Samsung-ro, Yongin-si, Gyeonggi-do 17113, Republic of Korea 出　　处：《Nano Research》索引2018年第11卷第5期,共7页 关 键 词：互补金属氧化物半导体 逻辑门 可弯曲 操作 RAIL-TO-RAIL 底层 硅 半导体技术