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Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs

查看全文 作　　者：Jie [1,2]Zhao;Yanhui [1]Xing;Kai [2]Fu;Peipei [3]Zhang;Liang [2]Song;Fu [2]Chen;Taotao [1,2]Yang;Xuguang [2]Deng;Sen [4]Zhang;Baoshun [2,5]Zhang 高影响力作者 机构地区：[1]Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124,China;[2]Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123,China;[3]Key Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University, Hangzhou 310018, China;[4]Tang Optoelectronics Equipment Co. Ltd, Shanghai, 201203, China;[5]Suzhou Powerhouse Electronics Co. Ltd, Suzhou 215123, China高影响力机构 出　　处：《Journal of Semiconductors》索引2018年第39卷第9期,共5页高影响力期刊 基　　金：supported by the Key Research and Development Program of Jiangsu Province(No.BE2016084);the National Natural Science Foundation of China(Nos.11404372,6157401,61704185);the Natural Science Foundation of Beijing,China(No.4182015);the Scientific Research Fund Project of Municipal Education Commission of Beijing(No.PXM2017_014204_500034);the National Key Scientific Instrument and Equipment Development Projects of China(No.2013YQ470767);the National Key Research and Development Program of China(No.2016YFC0801203) 摘　　要：The leakage current and breakdown voltage of Al Ga N/Ga N/Al Ga N high electron mobility transistors on silicon with different Ga N channel thicknesses were investigated.The results showed that a thin Ga N channel was beneficial for obtaining a high breakdown voltage,based on the leakage current path and the acceptor traps in the Al Ga N back-barrier.The breakdown voltage of the device with an 800 nm-thick Ga N channel was 926 V@1 m A/mm,and the leakage current increased slowly between 300 and 800 V.Besides,the raising conduction band edge of the Ga N channel by the Al Ga N back-barrier lead to little degradation for sheet 2-D electron gas density,especially,in the thin Ga N channel.The transfer and output characteristics were not obviously deteriorated for the samples with different Ga N channel thickness.Through optimizing the Ga N channel thickness and designing the Al GaN back-barrier,the lower leakage current and higher breakdown voltage would be possible. 关 键 词：ALGAN/GAN 故障电压 厚度 漏电流 隧道 晶体管 活动性 硅
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