Significant enhancement of photoresponsive characteristics and mobility of MoS2-based transistors through hybridization with perovskite CsPbBr3 quantum dots

查看全文 作　　者：Taeho [1]Noh;Heung Seob [2]Shin;Changwon [3]Seo;Jun Young [1]Kim;Jongwon [1]Youn;Jeongyong [3]Kim;Kwang-Sup [2]Lee;Jinsoo [1]Joo

机构地区：[1]Department of Physics, Korea University, Seoul 02841, Republic of Korea;[2]Department of Advanced Materials and Chemical Engineering, Hannatn University, Daejeon 34430, Republic of Korea;[3]Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea

出　　处：《Nano Research》索引2019年第12卷第2期,共8页

摘　　要：Inorganic perovskite CsPbBr3 quantum dots (QDs) are potential nanoscale photosensitizers;moreover,two-dimensional (2-D) molybdenum disulfide (MoS2) has been intensively studied for application in the active layers of optoelectronic devices.In this study,heterostructures of 2D-monolayered MoS2 with zero-dimensional functionalized CsPbBr3 QDs were prepared,and their nanoscale optical characteristics were investigated.The effect of n-type doping on the MoS2 monolayer after hybridization with perovskite CsPbBr3 QDs was observed using laser confocal microscope photoluminescenca (PL) and Raman spectra.Field-effect transistors (FETs) using MoS2 and the MoS2-CsPbBr3 QDs hybrid were also fabricated,and their electrical and photoresponsive characteristics were investigated in terms of the charge transfer effect.For the MoS2-CsPbBr3 QDs-based FETs,the field effect mobility and photoresponsivity upon light irradiation were enhanced by ~ 4 times and a dramatic ~ 17 times,respectively,compared to the FET prepared without the parovskite QDs and without light irradiation.It is noteworthy that the photoresponsivity of the MoS-2-CsPbBr3 QDs-based FETs significantly increased with increasing light power,which is completely contrary to the behavior observed in previous studies of MoS2-based FETs.The increased mobility and significant enhancement of the photoresponsivity can be attributed to the n-type doping effect and efficient energy transfer from CsPbBr3 QDs to MoS2.The results indicate that the optoelectronic characteristics of MoS2-based FETs can be significantly improved through hybridization with photosensitive parovskite CsPbBr3 QDs. 关键词：MOS2 PEROVSKITE quantum dot transistor photoresponsivity MOBILITY charge transfer

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Significant enhancement of photoresponsive characteristics and mobility of MoS2-based transistors through hybridization with perovskite CsPbBr3 quantum dots

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