Research on Flexible GaInP/GaInAs/Ge/Bi2Te3/Sb2Te3 PV-TE Integrated Systems

查看全文 作　　者：[1]高鹏;CHEN [2]Lilin;WU [2]Bo;ZHANG [1]Qiming;XUE [1]Chao;HOU [2]Chengyi;SUN [1]Qiang 机构地区：[1]Tianjin Institute of Power Sources,Tianjin 300384,China;[2]State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,College of Materials Science and Engineering,Donghua University, Shanghai 201620,China 出　　处：《Journal of Wuhan University of Technology(Materials Science)》索引2019年第34卷第4期,共6页 摘　　要：An optimal structure design of the lattice mismatched GaInP/GaInAs/Ge solar cell with high photoelectric conversion efficiency was proposed. Two-dimensional Bi2Te3/Sb2Te3 nanosheets were prepared by solvothermal synthesis method used as thermoelectric(TE) functional materials, which is further hybrid with high conductive reduced graphene oxide(rGO) and carbon nanotubes(CNTs). TE film was then fabricated based on above materials. The power factor of the n-type TE film is 19.31 μW/mK2, and the power factor of the p-type TE film is 97.40 μW/mK2. The flexible TE device was integrated with flexible solar cell. Compared with the single photovoltaic(PV) cell, the efficiency of the as-prepared flexible integrated device measured under the AM1.5 illumination is significantly improved. The efficiency of the two parallel tests is increased from 27.26% and 26.59%, to 29.11% and 28.92%, respectively. The increasing ratio reaches 6.7%-8.8%. 关 键 词：GaInP/GaInAs/Ge FLEXIBLE THERMOELECTRIC integrated systems