Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

查看全文 作　　者：Fangzhou [1]Li;SenPo [1,2,3]Yip;Ruoting [1,2]Dong;Ziyao [1,2]Zhou;Changyong [1]Lan;Xiaoguang [1]Liang;Dapan [1]Li;You [1]Meng;Xiaolin [1]Kang;Johnny C. [1,2,3,4]Ho

机构地区：[1]Department of Materials Science and Engineering,City University of Hong Kong,Hong Kong 999077,China;[2]Shenzhen Research Institute,City University of Hong Kong Shenzhen 518057,China;[3]State Key Laboratory of Terahertz and Millimeter Waves,City University of Hong Kong Hong Kong 999077,China;[4]Centre for Functional Photonics,City University of Hong Kong Hong Kong 999077,China

出　　处：《Nano Research》索引2019年第12卷第8期,共8页

基　　金：supported by the National Natural Science Foundation of China (No.51672229);the General Research Fund (CityU 11211317);the Theme-based Research (T42-103/16-N) of the Research Grants Council of Hong Kong SAR, China, and the Science Technology and Innovation Committee of Shenzhen Municipality (NO.JCYJ20170818095520778);a grant from the Shenzhen Research Institute, City University of Hong Kong. 摘　　要：Amorphous indium-gallium-zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications;however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn2.4O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm^2-V^-1·s^-1 and on/off current ratio of ~ 10^6. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies. 关键词：INGAZNO NANOWIRES thin-film TRANSISTORS SUPERLATTICE

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Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

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