Investigation of positive bias temperature instability for monolayer polycrystalline MoS2 field-effect transistors

查看全文 作　　者：GuanHua [1,2,3]Yang;Jia Wei [1,2,3]Wang;JieBin [1,2,3]Niu;XiChen [1,2,3]Chuai;CongYan [1,2,3]Lu;Di [1,2,3]Geng;NianDuan [1,2,3]Lu;Ling [1,2,3]Li;Ming [1,2,3]Liu 机构地区：[1]Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;[2]University of Chinese Academy of Sciences,Beijing 100049,China;[3]Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM),Nanjing 210009,China 出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2020年第63卷第1期,共4页 基　　金：supported by the National Key Research and Development Program(Grant Nos.2018YFA0208503,2017YFB0701703,2016YFA020-1802,and 2016YFA0201802);the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,the Beijing Training Project for the Leading Talents in S&T(Grant No.Z151100000315008);the National Natural Science Foundation of China(Grant Nos.61725404,61890944,61574166,61874134,61804170,61221004,61404164,61821091,and61888102);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000,and XDB12030400) 摘　　要：In recent years,molybdenum disulfide(Mo S2)has exhibited remarkable electrical,mechanical and optical properties because of its ultrathin body thickness,flexibility and direct bandgap for photo response[1]. 关 键 词：POLYCRYSTALLINE MOLYBDENUM effect